document number: 94196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 schottky rectifier, 2 x 15 a vs-30l30ct-1pbf vishay semiconductors features ? 150 c t j operation ? center tap configuration ? very low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? guard ring for enhanced ruggedness and long term reliability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? halogen-free according to iec 61249-2-21 definition ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified description this center tap schottky rect ifier has been optimized for very low forward voltage drop, with moderate leakage. the proprietary barrier technology allows for reliable operation up to 150 c junction tempera ture. typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. product summary package to-262aa i f(av) 2 x 15 a v r 30 v v f at i f 0.37 v i rm 350 ma at 125 c t j max. 150 c diode variation common cathode e as 15 mj ba s e common cathode a node anode common cathode 1 3 2 2 to-262 major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 30 a v rrm 30 v v f 15 apk, t j = 125 c (per leg) 0.37 t j range - 55 to 150 c voltage ratings parameter symbol vs-30l30ct-1pbf units maximum dc reverse voltage v r 30 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current per device i f(av) 50 % duty cycle at t c = 140 c, rectangular waveform 30 a per leg 15 maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1450 10 ms sine or 6 ms rect. pulse 220 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 2 a, l = 7.5 mh 15 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94196 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-oct-10 vs-30l30ct-1pbf vishay semiconductors schottky rectifier, 2 x 15 a note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop per leg v fm (1) 15 a t j = 25 c 0.46 v 30 a 0.57 15 a t j = 125 c 0.37 30 a 0.50 maximum reverse leakage current per leg i rm (1) t j = 25 c v r = rated v r 1.50 ma t j = 125 c 350 maximum junction ca pacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 1500 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 150 c maximum thermal resistance, junction to case per leg r thjc dc operation 1.5 c/w maximum thermal resistance, junction to case per package 0.8 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-262 30l30ct-1
document number: 94196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-30l30ct-1pbf schottky rectifier, 2 x 15 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 100 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.6 1.2 1.6 1.4 0.8 0.4 0 1.0 t j = 150 c t j = 125 c t j = 25 c 0.01 0.1 100 10 1 1000 i r - reverse current (ma) v r - reverse voltage (v) 515 30 20 10 0 25 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 100 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 515 30 35 20 10 0 25 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single pulse (thermal resistance) d = 0.75 p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.20 d = 0.25 d = 0.33 d = 0.50
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94196 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-oct-10 vs-30l30ct-1pbf vishay semiconductors schottky rectifier, 2 x 15 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-repeti tive surge current (per leg) note (1) formula used: t c = t j - pd x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6) 130 135 145 140 150 allowable case temperature (c) i f(av) - average forward current (a) 10 25 15 5 0 20 dc see note (1) square wave (d = 0.50) 0 2 4 6 8 10 average power loss (w) i f(av) - average forward current (a) 515 25 20 10 0 rms limit dc dc = 0.20 dc = 0.25 dc = 0.33 dc = 0.50 dc = 0.75 100 1000 10 000 i fsm - non-repetitivesurge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
document number: 94196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-30l30ct-1pbf schottky rectifier, 2 x 15 a vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95419 part marking information www.vishay.com/doc?95420 spice model www.vishay.com/doc?95287 2 - current rating (30 a) 3 - l = low v f 4 - voltage rating (30 = 30 v) 5 - circuit configuration: c = common cathode tube standard pack quantity: 50 pieces 6 - t = to-220 - -1 = to-262 7 - pbf = lead (pb)-free 8 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 vs- 30 l 30 c t -1 pbf
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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